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IS62C10248AL IS65C10248AL
1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
FEATURES
* High-speedaccesstime:45ns,55ns * CMOSlowpoweroperation - 36 mW (typical) operating -12W(typical)CMOSstandby * TTLcompatibleinterfacelevels * Singlepowersupply -4.5V--5.5VVdd * Threestateoutputs * Automotivetemperature(-40oC to +125oC) * Lead-freeavailable
PRELIMINARY INFORMATION OCTOBER 2009
speed, 8M bit static RAMs organized as 1M words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOSinputlevels. Easy memory expansion is provided by using Chip Enable andOutputEnableinputs.TheactiveLOWWriteEnable (WE) controls both writing and reading of the memory. TheIS62C10248ALandIS65C10248ALarepackagedin theJEDECstandard48-pinminiBGA(9mmx11mm)and 44-PinTSOP(TYPEII).
DESCRIPTION The ISSI IS62C10248AL/IS65C10248AL are high-
FUNCTIONAL BLOCK DIAGRAM
A0-A19
DECODER
1M x 8 MEMORY ARRAY
VDD GND I/O DATA CIRCUIT
I/O0-I/O7
COLUMN I/O
CS2 CS1 OE WE
Copyright (c) 2009 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
CONTROL CIRCUIT
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. 00A 09/25/09
1
IS62C10248AL, IS65C10248AL
PIN CONFIGURATION (1M x 8 Low Power) 48-pin mini BGA (B) (9mm x 11mm) 44-pin TSOP (Type II)
1
A B C D E F G H
NC
2
OE
3
A0
4
A1
5
A2
6
CS2
NC
NC
A3
A4
CS1
NC
I/O0
NC
A5
A6
NC
I/O4
GND
I/O1
A17
A7
I/O5
VDD
VDD
I/O2
NC
A16
I/O6
VSS
I/O3
NC
A14
A15
NC
I/O7
NC
NC
A12
A13
WE
NC
A18
A8
A9
A10
A11
A19
A4 A3 A2 A1 A0 CS1 NC NC I/O0 I/O1 VDD GND I/O2 I/O3 NC NC WE A19 A18 A17 A16 A15
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
A5 A6 A7 OE CS2 A8 NC NC I/O7 I/O6 GND VDD I/O5 I/O4 NC NC A9 A10 A11 A12 A13 A14
PIN DESCRIPTIONS
A0-A19 CS1 CS2 OE WE I/O0-I/O7 NC Vdd GND AddressInputs Chip Enable 1 Input Chip Enable 2 Input OutputEnableInput Write Enable Input Input/Output No Connection Power Ground
2
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. 00A 09/25/09
IS62C10248AL, IS65C10248AL
TRUTH TABLE
Mode WE NotSelected X (Power-down) X OutputDisabled H Read H Write L CS1 H X L L L CS2 X L H H H OE X X H L X I/O Operation High-Z High-Z High-Z dout din Vdd Current isb1, isb2 isb1, isb2 iCC iCC iCC
OPERATING RANGE (Vdd)
Range Ambient Temperature Vdd Speed
Commercial Industrial Automotive
0Cto+70C -40Cto+85C -40Cto+125C
4.5V-5.5V 4.5V-5.5V 4.5V-5.5V
45ns 55ns 55ns
CAPACITANCE(1,2)
Symbol Cin Cout Parameter Input Capacitance OutputCapacitance Conditions Vin = 0V Vout = 0V Max. 5 7 Unit pF pF
Notes: 1.Testedinitiallyandafteranydesignorprocesschangesthatmayaffecttheseparameters. 2. Testconditions:Ta = 25C, f=1MHz,Vdd=5.0V.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. 00A 09/25/09
3
IS62C10248AL, IS65C10248AL
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Vterm tstg Pt iout Parameter TerminalVoltagewithRespecttoGND StorageTemperature PowerDissipation DCOutputCurrent(LOW) Value -0.5to+7.0 -65to+150 1.5 20 Unit V C W mA
Notes: 1.StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycause permanentdamagetothedevice.Thisisastressratingonlyandfunctionaloperation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS (OverOperatingRange)
Symbol Parameter Voh Vol Vih Vil ili OutputHIGHVoltage OutputLOWVoltage InputHIGHVoltage InputLOWVoltage(1) InputLeakage Test Conditions Vdd = Min.,ioh = -1mA Vdd = Min.,iol = 2.1mA GND Vin Vdd Com. Ind. Auto. Com. Ind. Auto. Min. 2.4 -- 2.2 -0.3 -1 -2 -5 -1 -2 -5 Max. -- 0.4 Vdd + 0.5 0.8 1 2 5 1 2 5 Unit V V V V A
ilo
OutputLeakage
GND Vout Vdd OutputsDisabled
A
Note: 1. Vil (min) = -0.3V DC; Vil (min) = -2.0VAC(pulsewidth-2.0ns).Not100%tested. Vih (max) = Vdd + 0.3V DC; Vih (max) = Vdd + 2.0VAC(pulsewidth-2.0ns).Not100%tested.
4
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. 00A 09/25/09
IS62C10248AL, IS65C10248AL
AC TEST CONDITIONS
Parameter InputPulseLevel InputRiseandFallTimes InputandOutputTiming andReferenceLevel OutputLoad Unit 0Vto3.0V 5ns 1.5V SeeFigures1and2

AC TEST LOADS
481 5V OUTPUT 30 pF Including jig and scope 255
5V OUTPUT 5 pF Including jig and scope 255 481
Figure 1
Figure 2
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. 00A 09/25/09
5
IS62C10248AL, IS65C10248AL
POWER SUPPLY CHARACTERISTICS(1) (OverOperatingRange)
-45 ns Symbol Parameter iCC VddDynamicOperating Supply Current Test Conditions Min. Com. Ind. Auto. typ
(2)
-55 ns Min. -- -- Max. Unit mA 25 40 12
Max. 25
Vdd = Max.,CS1 = Vil, CS2=Vih iout = 0 mA Vin = Vih or Vil f = fmax
--
13 -- 10 -- -- -- 1 -- -- -- 40 -- -- 15
iCC1
Average operating
Current
CS1 = Vil, Cs2 = Vih i i/o = 0 mA Vin = Vih or Vil Vdd = Max.,CS1 Vih, CS2 Vil Vin = Vih or Vil f=0 Vdd = Max., CS1 Vdd - 0.2V and CS2 Vss + 0.2V Vin Vdd - 0.2V or Vin Vss + 0.2V f=0
Com. Ind. Auto. Com. Ind. Auto. Com. Ind. Auto. typ
(2)
mA 10 20 mA 1.5 2
Isb1
TTLStandbyCurrent (TTLInputs)
Isb2
CMOSStandby Current(CMOSInputs)
A
60 180
Note: 1. At f = fmax, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 2.TypicalValuesaremeasuredatVcc=5V,Ta = 25oCandnot100%tested.
6
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. 00A 09/25/09
IS62C10248AL, IS65C10248AL
READ CYCLE SWITCHING CHARACTERISTICS(1) (OverOperatingRange)
Symbol Parameter ReadCycleTime AddressAccessTime OutputHoldTime CS1/CS2AccessTime OEAccessTime OEtoHigh-ZOutput OEtoLow-ZOutput CS1/CS2toHigh-ZOutput CS1/CS2toLow-ZOutput 45 ns Min. 45 -- 10 -- -- -- 5 0 10 55 ns Max. -- 45 -- 45 20 15 -- 15 -- Min. 55 -- 10 -- -- -- 5 0 10 Max. -- 55 -- 55 25 20 -- 20 -- Unit ns ns ns ns ns ns ns ns ns
trC taa toha taCs1/taCs2 tdoe thzoe(2) tlzoe(2) thzCs1/thzCs2(2) tlzCs1/tlzCs2(2)
Notes: 1. Testconditionsassumesignaltransitiontimesof5nsorless,timingreferencelevelsof1.5V,inputpulselevelsof0Vto3.0V and output loading specified in Figure 1. 2. TestedwiththeloadinFigure2.Transitionismeasured500mVfromsteady-statevoltage.Not100%tested.
AC WAVEFORMS READ CYCLE NO. 1(1,2) (Address Controlled) (CS1 = OE=Vil, Cs2 = WE=Vih)
tRC
ADDRESS
tAA tOHA tOHA
DATA VALID
DOUT
PREVIOUS DATA VALID
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. 00A 09/25/09
7
IS62C10248AL, IS65C10248AL
AC WAVEFORMS READ CYCLE NO. 2(1,3) (CS1, CS2, AND OE Controlled)
tRC
ADDRESS
tAA tOHA
OE
tDOE tHZOE
CS1
tACS1/tACS2
tLZOE
CS2
tLZCS1/ tLZCS2
HIGH-Z
tHZCS
DATA VALID
DOUT
Notes: 1. WEisHIGHforaReadCycle. 2. Thedeviceiscontinuouslyselected.OE, CS1 = Vil. Cs2=WE=Vih. 3. Address is valid prior to or coincident with CS1LOWandCS2HIGHtransition.
8
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. 00A 09/25/09
IS62C10248AL, IS65C10248AL
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2)(OverOperatingRange)
Symbol Parameter twC WriteCycleTime tsCs1/tsCs2 CS1/CS2toWriteEnd taw AddressSetupTimetoWriteEnd tha AddressHoldfromWriteEnd tsa AddressSetupTime (4) tPwe WEPulseWidth tsd DataSetuptoWriteEnd thd DataHoldfromWriteEnd thzwe(3) WELOWtoHigh-ZOutput (3) tlzwe WEHIGHtoLow-ZOutput 45ns Min. Max. 45 -- 35 -- 35 -- 0 -- 0 -- 35 -- 25 -- 0 -- -- 20 5 -- 55 ns Min. 55 45 45 0 0 40 30 0 -- 5 Max. -- -- -- -- -- -- -- -- 20 -- Unit ns ns ns ns ns ns ns n s ns ns
Notes: 1. Testconditionsassumesignaltransitiontimesof5nsorless,timingreferencelevelsof1.5V,inputpulselevelsof0Vto3.0V and output loading specified in Figure 1. 2. Theinternalwritetimeisdefinedbytheoverlapof CS1 LOW,CS2HIGH,andWELOW.AllsignalsmustbeinvalidstatestoinitiateaWrite,butanyonecan go inactive to terminatetheWrite.TheDataInputSetupandHoldtimingarereferencedtotherisingorfallingedgeofthesignalthatterminatesthewrite. 3. TestedwiththeloadinFigure2.Transitionismeasured500mVfromsteady-statevoltage.Not100%tested. 4.tPwe > thzwe + tsd when OEisLOW.
AC WAVEFORMS WRITE CYCLE NO. 1 (CS1/CS2 Controlled, OE=HIGHorLOW)
tWC
ADDRESS
tSCS1 tHA
CS1
tSCS2
CS2
tAW tPWE tSA tHZWE
HIGH-Z
WE
tLZWE
DOUT
DATA UNDEFINED
tSD
tHD
DIN
DATA-IN VALID
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. 00A 09/25/09
9
IS62C10248AL, IS65C10248AL
WRITE CYCLE NO. 2 (WEControlled:OEisHIGHDuringWriteCycle)
tWC
ADDRESS
OE
tSCS1 tHA
CS1
tSCS2
CS2
tAW tPWE tSA tHZWE
HIGH-Z
WE
tLZWE
DOUT
DATA UNDEFINED
tSD
tHD
DIN
DATA-IN VALID
WRITE CYCLE NO. 3 (WEControlled:OEisLOWDuringWriteCycle)
tWC
ADDRESS
OE
tSCS1 tHA
CS1
tSCS2
CS2
tAW tPWE tSA tHZWE
HIGH-Z
WE
tLZWE
DOUT
DATA UNDEFINED
tSD
tHD
DIN
DATA-IN VALID
10
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. 00A 09/25/09
IS62C10248AL, IS65C10248AL
DATA RETENTION SWITCHING CHARACTERISTICS (4.5V - 5.5V)
Symbol
Vdr
idr
Parameter VddforDataRetention DataRetentionCurrent
tsdr trdr
Test Condition SeeDataRetentionWaveform Vdd=2.0Vand CS1 Vdd -0.2Vand (a) CS2 Vdd -0.2Vor (b) CS2 GND+0.2V DataRetentionSetupTime SeeDataRetentionWaveform RecoveryTime SeeDataRetentionWaveform
Com. Ind. Auto.
Min. 2.0 -- -- -- -- 0
trC
Typ.(1) 15 -- --
Max. 5.5 20 40 60 180 -- --
Unit V A ns ns

Note: 1.TypicalValuesaremeasuredatVcc=5V,Ta = 25oCandnot100%tested.
DATA RETENTION WAVEFORM (CS1 Controlled)
tSDR VDD 1.65V Data Retention Mode tRDR
1.4V
VDR CS1 VDD - 0.2V
CS1 GND
DATA RETENTION WAVEFORM (CS2 Controlled)
Data Retention Mode VDD CE2 2.2V VDR 0.4V GND CS2 0.2V tSDR tRDR
3.0
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. 00A 09/25/09
11
IS62C10248AL, IS65C10248AL
IS62C10248AL (4.5V - 5.5V) Industrial Range: -40C to +85C
Speed (ns) 55 Order Part No.* IS62C10248AL-55TLI IS62C10248AL-55MLI Package TSOP-II,Lead-free miniBGA,Lead-free(9mmx11mm)
*Devices will meet 45ns when used in 0oC to +70oC temperature range.
IS65C10248AL (4.5V - 5.5V) Industrial Range: -40C to +125C
Speed (ns) 55 Order Part No. IS65C10248AL-55CTLA3 IS65C10248AL-55MLA3 Package TSOP-II,Lead-free,CopperLead-frame miniBGA,Lead-free(9mmx11mm)
12
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. 00A 09/25/09
Rev. 00A 09/25/09
IS62C10248AL, IS65C10248AL
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
NOTE :
1. CONTROLLING DIMENSION : MM 2. DIMENSION D AND E1 DO NOT INCLUDE MOLD PROTRUSION. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION/INTRUSION.
Package Outline
06/04/2008
13
IS62C10248AL, IS65C10248AL
08/21/2008
14 Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. 00A 09/25/09
NOTE :
1. CONTROLLING DIMENSION : MM . 2. Reference document : JEDEC MO-207

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